Перегляд за автором "Agueev, O.A."

Результати 1-6 з 6

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Litvinov, V.L.; Demakov, K.D.; Agueev, O.A.; Svetlichny, A.M.; Konakova, R.V.; Lytvyn, P.M.; Lytvyn, O.S.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of ...
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

Agueev, O.A.; Svetlichny, A.M.; Soloviev, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General ...
The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating

Agueev, O.A.; Svetlichny, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape ...
Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating

Agueev, O.A.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize ...

Результати 1-6 з 6

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Перегляд за автором "Agueev, O.A."

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Перегляд за автором "Agueev, O.A."

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